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RELEVANT RESULTS FOR K4E151612D-T DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | K4E151611 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 2. | K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 3. | K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 4. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 5. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 6. | K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 7. | K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 8. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 9. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb | 10. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
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