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RELEVANT RESULTS FOR IRF251 DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | IRF250 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | SAMSUNG | - | - | - | 221 Kb | 2. | IRF250 | N-CHANNEL POWER MOSFET | Seme LAB | SEMELAB | - | - | - | 19 Kb | 3. | IRF250 | 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET | Intersil Corporation | INTERSIL | - | - | - | 65 Kb | 4. | IRF250 | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | List of Unclassifed Manufacturers | ETC | - | - | - | 83 Kb | 5. | IRF250 | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | IXYS Corporation | IXYS | - | - | - | 48 Kb | 6. | IRF250SMD | N.CHANNEL POWER MOSFET | Seme LAB | SEMELAB | - | - | - | 24 Kb | 7. | IRF251 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | SAMSUNG | - | - | - | 221 Kb | 8. | IRF251 | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | IXYS Corporation | IXYS | - | - | - | 48 Kb | 9. | IRF252 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | SAMSUNG | - | - | - | 221 Kb | 10. | IRF252 | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | IXYS Corporation | IXYS | - | - | - | 48 Kb | 11. | IRF253 | N-CHANNEL POWER MOSFETS | Samsung semiconductor | SAMSUNG | - | - | - | 221 Kb | 12. | IRF253 | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | IXYS Corporation | IXYS | - | - | - | 48 Kb | 13. | IRF254 | High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | IXYS Corporation | IXYS | - | - | - | 48 Kb |
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