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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | TC593 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
2. | TC59 | Low Dropout, Negative Output Voltage Regulator | Microchip Technology | MICROCHIP | - | - | - | 584 Kb |
3. | TC59 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
4. | TC593 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
5. | TC593002ECB | Low Dropout, Negative Output Voltage Regulator | Microchip Technology | MICROCHIP | - | - | - | 584 Kb |
6. | TC594 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
7. | 2STC5948 | High power NPN epitaxial planar bipolar transistor | STMicroelectronics | STMICROELECTRONICS | - | - | - | 145 Kb |
8. | 2STC5948_0807 | High power NPN epitaxial planar bipolar transistor | STMicroelectronics | STMICROELECTRONICS | - | - | - | 145 Kb |
9. | 2STC5949 | High power NPN epitaxial planar bipolar transistor | STMicroelectronics | STMICROELECTRONICS | - | - | - | 128 Kb |
10. | TC595002ECB | Low Dropout, Negative Output Voltage Regulator | Microchip Technology | MICROCHIP | - | - | - | 584 Kb |
11. | TC59A | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
12. | TC59LM806CFT-50 | 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 2.25 Mb |
13. | TC59LM806CFT-55 | 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 2.25 Mb |
14. | TC59LM806CFT-60 | 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 2.25 Mb |
15. | TC59LM814CFT | 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 2.25 Mb |
16. | TC59LM814CFT-50 | 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 2.25 Mb |
17. | TC59LM814CFT-55 | 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 2.25 Mb |
18. | TC59LM814CFT-60 | 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 2.25 Mb |
19. | TC59LM818DMB-33 | MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 | Toshiba Semiconductor | TOSHIBA | - | - | - | 755 Kb |
20. | TC59LM818DMB-40 | MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 | Toshiba Semiconductor | TOSHIBA | - | - | - | 755 Kb |
21. | TC59LM818DMG-33 | MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 | Toshiba Semiconductor | TOSHIBA | - | - | - | 754 Kb |