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RELEVANT RESULTS FOR K4R881869D DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | K4R881869 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb | 2. | K4R881869D | 256/288Mbit RDRAM(D-die) | Samsung semiconductor | SAMSUNG | - | - | - | 327 Kb | 3. | K4R881869I-DC | Direct RDRAM Product Guide | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb | 4. | K4R881869M | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb | 5. | K4R881869M-NBCCG6 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb | 6. | K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb | 7. | K4R881869M-NCK7 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb | 8. | K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb |
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