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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  MJD112 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | Motorola, Inc | MOTOROLA | - | - | - | 313 Kb |
| 2. | MJD112 | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 158 Kb |
| 3. | MJD112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMicroelectronics | STMICROELECTRONICS | - | - | - | 84 Kb |
| 4. | MJD112 | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | KEC(Korea Electronics) | KEC | - | - | - | 393 Kb |
| 5. | MJD112 | D-PAK for Surface Mount Applications | Fairchild Semiconductor | FAIRCHILD | - | - | - | 54 Kb |
| 6. | MJD112 | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 104 Kb |
| 7. | MJD112 | NPN Silicon Darlington Transistor | Fairchild Semiconductor | FAIRCHILD | - | - | - | 126 Kb |
| 8. | MJD112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMicroelectronics | STMICROELECTRONICS | - | - | - | 167 Kb |
| 9. | MJD112 | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR | Dc Components | DCCOM | - | - | - | 95 Kb |
| 10. | MJD112 | Complementary power Darlington transistors | STMicroelectronics | STMICROELECTRONICS | - | - | - | 366 Kb |
| 11. | MJD112-001 | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 158 Kb |
| 12. | MJD112-001 | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 104 Kb |
| 13. | MJD112-1 | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 313 Kb |
| 14. | MJD112-1G | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 104 Kb |
| 15. | MJD1121 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | Motorola, Inc | MOTOROLA | - | - | - | 313 Kb |
| 16. | MJD112G | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 104 Kb |
| 17. | MJD112G | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 144 Kb |
| 18. | MJD112L | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | KEC(Korea Electronics) | KEC | - | - | - | 393 Kb |
| 19. | MJD112RL | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 158 Kb |
| 20. | MJD112RL | Complementary Darlington Power Transistors | ON Semiconductor | ONSEMI | - | - | - | 104 Kb |
