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RELEVANT RESULTS FOR GT30J122 DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | GT30J101 | Silicon N Channel IGBT | Toshiba Semiconductor | TOSHIBA | - | - | - | 290 Kb | 2. | GT30J101 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 194 Kb | 3. | GT30J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | TOSHIBA | - | - | - | 293 Kb | 4. | GT30J121_06 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 182 Kb | 5. | GT30J122 | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING | Toshiba Semiconductor | TOSHIBA | - | - | - | 499 Kb | 6. | GT30J301 | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 324 Kb | 7. | GT30J311 | N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 322 Kb | 8. | GT30J322 | N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 253 Kb | 9. | GT30J324 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Toshiba Semiconductor | TOSHIBA | - | - | - | 170 Kb | 10. | GT30J324 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 192 Kb | 11. | GT30J324_06 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 192 Kb |
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