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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 51974 | True Hermetically Sealed Proportionally Controlled Heater Hybrids | Micropac Industries | MICROPAC | - | - | - | 515 Kb |
2. | B45197 | Tantalum Chip Capacitors | EPCOS | EPCOS | - | - | - | 128 Kb |
3. | 2N5197 | Monolithic N-Channel JFET Duals | Vishay Siliconix | VISHAY | - | - | - | 61 Kb |
4. | 2N5197 | N-CHANNEL JFET | Intersil Corporation | INTERSIL | - | - | - | 4.14 Mb |
5. | 2N5197 | MONOLITHIC DUAL N-CHANNEL JFETS | New Jersey Semi-Conductor Products, Inc. | NJSEMI | - | - | - | 166 Kb |
6. | EL5197 | Single 200MHz Fixed Gain Amplifier with Enable | Intersil Corporation | INTERSIL | - | - | - | 335 Kb |
7. | EL5197 | Single 200MHz Fixed Gain Amplifier with Enable | Intersil Corporation | INTERSIL | - | - | - | 279 Kb |
8. | 2SC5197 | Silicon NPN Power Transistors | Savantic, Inc. | SAVANTIC | - | - | - | 170 Kb |
9. | 2SC5197 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 144 Kb |
10. | 2SC5197 | isc Silicon NPN Power Transistor | Inchange Semiconductor Company Limited | ISC | - | - | - | 137 Kb |
11. | 2SC5197 | Silicon NPN Triple Diffused Type Power Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 119 Kb |
12. | KTC5197 | TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER) | KEC(Korea Electronics) | KEC | - | - | - | 258 Kb |
13. | HC15197 | Breake Away Header .025(0.64mm) Square Posts | List of Unclassifed Manufacturers | ETC | - | - | - | 154 Kb |
14. | STI5197 | Cost-effective QAM demodulator and MPEG2 decoder for SD set-top box applications | STMicroelectronics | STMICROELECTRONICS | - | - | - | 70 Kb |
15. | HB15197 | Breake Away Header .025(0.64mm) Square Posts | List of Unclassifed Manufacturers | ETC | - | - | - | 154 Kb |
16. | TPS65197 | 8-Channel Level-Shifter Supporting Different Charge-Sharing Methods and Panel | Texas Instruments | TI | - | - | - | 294 Kb |
17. | 0009075197 | 3.96mm (.156") KK^ IDT Double Cantilever Contact, 19 Circuits, Tin (Sn), Feed-Through, 24 and 22 Solid or Fused Stranded, and 22 Stranded, Black I | Molex Electronics Ltd. | MOLEX | - | - | - | 472 Kb |
18. | 09-06-5197 | IDT CHANGE HEAD Specification Sheet | Molex Electronics Ltd. | MOLEX | - | - | - | 173 Kb |
19. | 09-07-5197 | 3.96mm (.156") KK^ IDT Double Cantilever Contact, 19 Circuits, Tin (Sn), Feed-Through, 24 and 22 Solid or Fused Stranded, and 22 Stranded, Black I | Molex Electronics Ltd. | MOLEX | - | - | - | 472 Kb |
20. | 09-07-5197 | IDT CHANGE HEAD Specification Sheet | Molex Electronics Ltd. | MOLEX | - | - | - | 173 Kb |
21. | 5197-02 | 5.08mm (.200") Pitch SPOX Crimp Terminal Housing, 2 Circuits | Molex Electronics Ltd. | MOLEX | - | - | - | 77 Kb |