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ST2310HI Datasheet

 Datasheet for
Description:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer:STMicroelectronics
Temp. range:Min: - | Max: -
Package:Not available...
Pins:Not available...
Link: ST2310HI.PDF (77 Kb)


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ST2310HI.PDF

ST2310HI datasheet: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST2310HI

Datasheet


RELEVANT RESULTS FOR ST2310HI DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet ST2310DHIHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
246 Kb
2.
Datasheet ST2310FXHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
232 Kb
3.
Datasheet ST2310HIHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
77 Kb
4.
Datasheet PAM10ST2315C500 WATT TVS ARRAY
Protek Devices
PROTEC
-
-
-
648 Kb
5.
Datasheet ST2315SRGST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology
STANSON
-
-
-
218 Kb
6.
Datasheet ST2317DFXHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
62 Kb
7.
Datasheet ST2318SRGST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
Stanson Technology
STANSON
-
-
-
218 Kb
8.
Datasheet ST2319SRGST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
Stanson Technology
STANSON
-
-
-
227 Kb

 
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