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NE5500179A-T1 Datasheet

 Datasheet for
Description:4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
Manufacturer:California Eastern Labs
Temp. range:Min: - | Max: -
Package:Not available...
Pins:Not available...
Link: NE5500179A-T1.PDF (44 Kb)


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NE5500179A-T1.PDF

NE5500179A-T1 datasheet: 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS NE5500179A-T1

Datasheet


RELEVANT RESULTS FOR NE5500179A-T1 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet NE5500179ASILICON POWER MOS FET
NEC
NEC
-
-
-
67 Kb
2.
Datasheet NE5500179A4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
California Eastern Labs
CEL
-
-
-
44 Kb
3.
Datasheet NE5500179A-T1SILICON POWER MOS FET
NEC
NEC
-
-
-
67 Kb
4.
Datasheet NE5500179A-T14.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
California Eastern Labs
CEL
-
-
-
44 Kb

 
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