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GT60M301 Datasheet

 Datasheet for
Description:N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
Manufacturer:Toshiba Semiconductor
Temp. range:Min: - | Max: -
Package:Not available...
Pins:Not available...
Link: GT60M301.PDF (287 Kb)


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GT60M301.PDF

GT60M301 datasheet: N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) GT60M301

Datasheet


RELEVANT RESULTS FOR GT60M301 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet GT60M104N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)
Toshiba Semiconductor
TOSHIBA
-
-
-
248 Kb
2.
Datasheet GT60M301N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
Toshiba Semiconductor
TOSHIBA
-
-
-
287 Kb
3.
Datasheet GT60M302N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
Toshiba Semiconductor
TOSHIBA
-
-
-
272 Kb
4.
Datasheet GT60M303INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba Semiconductor
TOSHIBA
-
-
-
420 Kb
5.
Datasheet GT60M322TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba Semiconductor
TOSHIBA
-
-
-
188 Kb
6.
Datasheet GT60M323TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba Semiconductor
TOSHIBA
-
-
-
190 Kb
7.
Datasheet GT60M323Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
Toshiba Semiconductor
TOSHIBA
-
-
-
169 Kb
8.
Datasheet GT60M323_06Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
Toshiba Semiconductor
TOSHIBA
-
-
-
169 Kb

 
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