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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | K7K1618T2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 415 Kb |
2. | K7K1618U2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 429 Kb |
3. | K7K1636T2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 415 Kb |
4. | K7K1636U2C | 512Kx36 & 1Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 429 Kb |
5. | K7K3218T2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 415 Kb |
6. | K7K3218U2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 414 Kb |
7. | K7K3236T2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 415 Kb |
8. | K7K3236U2C | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM | Samsung semiconductor | SAMSUNG | - | - | - | 414 Kb |
9. | RS111/2W2K7KB | THE FIXED CARBON COMPOSITION RESISTORS | Sharma Electro Components,Inc | SHARMA | - | - | - | 434 Kb |
10. | FK7KM-12 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 68 Kb |
11. | FK7KM-12 | High-Speed Switching Use Nch Power MOS FET | Renesas Technology Corp | RENESAS | - | - | - | 190 Kb |
12. | RS111/2W2K7KT | THE FIXED CARBON COMPOSITION RESISTORS | Sharma Electro Components,Inc | SHARMA | - | - | - | 434 Kb |