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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 2SC5171 | NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 142 Kb |
2. | 2SC5171 | NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 142 Kb |
3. | 2SC5171 | Silicon NPN Epitaxial Type Power Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 121 Kb |
4. | 2SC5171_07 | Silicon NPN Epitaxial Type Power Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 121 Kb |
5. | 2SC5172 | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 164 Kb |
6. | 2SC5172 | Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 142 Kb |
7. | 2SC5172_06 | Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 142 Kb |
8. | 2SC5173 | HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS | Toshiba Semiconductor | TOSHIBA | - | - | - | 231 Kb |
9. | 2SC5173 | High-Voltage Switching and Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 134 Kb |
10. | 2SC5173_04 | High-Voltage Switching and Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 134 Kb |
11. | 2SC5174 | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE | Toshiba Semiconductor | TOSHIBA | - | - | - | 172 Kb |
12. | 2SC5174 | Power Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 111 Kb |
13. | 2SC5174_04 | Power Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 111 Kb |
14. | 2SC5175 | NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 143 Kb |
15. | 2SC5175 | High-Current Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 120 Kb |
16. | 2SC5175_04 | High-Current Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 120 Kb |
17. | 2SC5176 | NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 219 Kb |
18. | 2SC5176 | High-Current Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 142 Kb |
19. | 2SC5176_04 | High-Current Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 142 Kb |
20. | 2SC5177 | NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION | NEC | NEC | - | - | - | 59 Kb |
21. | 2SC5177-T1 | High fT, high gain transistor | NEC | NEC | - | - | - | 59 Kb |