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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | IRFF110 | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET | Intersil Corporation | INTERSIL | - | - | - | 333 Kb |
2. | IRFF110 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
3. | IRFF110 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | SEMELAB | - | - | - | 12 Kb |
4. | IRFF111 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
5. | IRFF112 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
6. | IRFF113 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
7. | IRFF120 | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET | Intersil Corporation | INTERSIL | - | - | - | 330 Kb |
8. | IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | IRF | - | - | - | 138 Kb |
9. | IRFF120 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
10. | IRFF121 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
11. | IRFF122 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
12. | IRFF123 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
13. | IRFF130 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | GESS | - | - | - | 167 Kb |
14. | IRFF130 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | SEMELAB | - | - | - | 12 Kb |
15. | IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET | Intersil Corporation | INTERSIL | - | - | - | 329 Kb |
16. | IRFF131 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | GESS | - | - | - | 167 Kb |
17. | IRFF132 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | GESS | - | - | - | 167 Kb |
18. | IRFF133 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | GESS | - | - | - | 167 Kb |