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Found: 47      Displaying: 21 - 30
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
Datasheet 2SD880YNPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W.
USHA
TO-220
3
-55°C
150°C
47K
22.
Datasheet 2SD882NPN power transistor, 40V, 3A
NEC
-
3
-55°C
150°C
165K
23.
Datasheet HSD880Emitter to base voltage:7V 3A NPN epitaxial planar transistor for low frequency power amplifier applications
HSMC
TO220AB
3
-
-
34K
24.
Datasheet HSD882Emitter to base voltage:5V 3A NPN epitaxial planar transistor for using in output stage of 1W audio amplifier
HSMC
TO-126ML
3
-
-
40K
25.
Datasheet HSD882SEmitter to base voltage:5V 3A NPN epitaxial planar transistor for the output stage of 0.75W audio, voltage regulator and relay driver
HSMC
-
3
-
-
42K
26.
Datasheet PJD882CK40V; 3A; NPN epitaxial silicon transistor
PROMX
TO-126
3
-20°C
85°C
184K
27.
Datasheet PJD882CT40V; 3A; NPN epitaxial silicon transistor
PROMX
-
3
-20°C
85°C
184K
28.
Datasheet SD880TSchottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 75degC 8.0 A.
PAJIT
TO-251AB
4
-55°C
125°C
43K
29.
Datasheet SD880YTSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A.
PAJIT
TO-251AB
4
-55°C
125°C
38K
30.
Datasheet SD880YTSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A.
PAJIT
TO-251AB
4
-55°C
125°C
38K
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