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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  MT4LC4M16N3TG--5 | 4 MEG x 16 EDO DRAM, 50ns | Micron Technology | MICRON | - | - | - | 373 Kb |
| 2. | MT4LC4M16N3TG--5S | 4 MEG x 16 EDO DRAM, 50ns | Micron Technology | MICRON | - | - | - | 373 Kb |
| 3. | MT4LC4M16N3TG--6 | 4 MEG x 16 EDO DRAM, 60ns | Micron Technology | MICRON | - | - | - | 373 Kb |
| 4. | MT4LC4M16N3TG--6S | 4 MEG x 16 EDO DRAM, 60ns | Micron Technology | MICRON | - | - | - | 373 Kb |
| 5. | MBR2080CTG-1 | Schottky Rectifier, 2 x 10 A | Vishay Siliconix | VISHAY | - | - | - | 134 Kb |
| 6. | MBR2090CTG-1 | Schottky Rectifier, 2 x 10 A | Vishay Siliconix | VISHAY | - | - | - | 134 Kb |
| 7. | MBR20100CTG-1 | Schottky Rectifier, 2 x 10 A | Vishay Siliconix | VISHAY | - | - | - | 134 Kb |
| 8. | SP6001-04UTG-1 | SP6001 Lead-Free/Green Series | Littelfuse | LITTELFUSE | - | - | - | 399 Kb |
| 9. | SP6002-0xUTG-1 | LCD and camera interfaces in mobile devices are vulnerable to EMI from the cellular band | Littelfuse | LITTELFUSE | - | - | - | 103 Kb |
| 10. | SP6001-06UTG-1 | SP6001 Lead-Free/Green Series | Littelfuse | LITTELFUSE | - | - | - | 399 Kb |
| 11. | SP6001-08UTG-1 | SP6001 Lead-Free/Green Series | Littelfuse | LITTELFUSE | - | - | - | 399 Kb |
| 12. | SP6002-04UTG-1 | SP6002 Lead-Free/Green Series | Littelfuse | LITTELFUSE | - | - | - | 362 Kb |
| 13. | SP6001-0XUTG-1 | LCD and camera interfaces in mobile devices are vulnerable to EMI from the cellular band | Littelfuse | LITTELFUSE | - | - | - | 103 Kb |
| 14. | SP6002-04UTG-1 | SP6002 Series 15pF 30kV EMI Filter Array | Littelfuse | LITTELFUSE | - | - | - | 322 Kb |
| 15. | SP6002-06UTG-1 | SP6002 Lead-Free/Green Series | Littelfuse | LITTELFUSE | - | - | - | 362 Kb |
| 16. | SP6002-06UTG-1 | SP6002 Series 15pF 30kV EMI Filter Array | Littelfuse | LITTELFUSE | - | - | - | 322 Kb |
| 17. | KM68257ETG-10 | 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns | Samsung semiconductor | SAMSUNG | - | - | - | 118 Kb |
| 18. | MT48LC4M8A1TG-10 | 1 Meg x 8 x 2banks, CL=2, 66MHz synchronous DRAM | Micron Technology | MICRON | - | - | - | 1.75 Mb |
| 19. | MT28S4M16LCTG-10 | 1Meg x 16 x 4banks, 100MHz syncflash memory | Micron Technology | MICRON | - | - | - | 916 Kb |
| 20. | TG-100 | HIGH ENERGY SPARK GAP DEVICES | Clare, Inc. | CLARE | - | - | - | 202 Kb |
