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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  DTD123 | Digital transistors (built-in resistor) | Rohm | ROHM | - | - | - | 48 Kb |
| 2. | STD123 | NPN Silicon Transistor | AUK corp | AUK | - | - | - | 181 Kb |
| 3. | STD123 | Silicon Epitaxial Planar Transistor | Galaxy Semi-Conductor Holdings Limited | BILIN | - | - | - | 246 Kb |
| 4. | STD123 | NPN Silicon Transistor | KODENSHI KOREA CORP. | KODENSHI | - | - | - | 173 Kb |
| 5. | TD1230 | Crystal Clock Oscillators | List of Unclassifed Manufacturers | ETC | - | - | - | 42 Kb |
| 6. | STD123AS | NPN Silicon Transistor | AUK corp | AUK | - | - | - | 157 Kb |
| 7. | STD123AS | NPN Silicon Transistor | KODENSHI KOREA CORP. | KODENSHI | - | - | - | 256 Kb |
| 8. | STD123ASF | NPN Silicon Transistor | AUK corp | AUK | - | - | - | 189 Kb |
| 9. | STD123ASF | NPN Silicon Transistor | KODENSHI KOREA CORP. | KODENSHI | - | - | - | 256 Kb |
| 10. | DTD123E | DIGITAL TRANSISTOR | Rohm | ROHM | - | - | - | 713 Kb |
| 11. | PDTD123E | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW | NXP Semiconductors | PHILIPS | - | - | - | 63 Kb |
| 12. | PDTD123E | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kY, R2 = 2.2 kY | NXP Semiconductors | NXP | - | - | - | 113 Kb |
| 13. | DDTD123EC | NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR | Diodes Incorporated | DIODES | - | - | - | 65 Kb |
| 14. | DDTD123EC | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR | Diodes Incorporated | DIODES | - | - | - | 56 Kb |
| 15. | DDTD123EC-7 | NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR | Diodes Incorporated | DIODES | - | - | - | 56 Kb |
| 16. | DTD123EK | Digital transistors (built-in resistors) | Rohm | ROHM | - | - | - | 61 Kb |
| 17. | DTD123EK | 500mA / 50V Digital transistors (with built-in resistors) | Rohm | ROHM | - | - | - | 57 Kb |
| 18. | DTD123EK | 500mA / 50V Digital transistors (with built-in resistors) | Rohm | ROHM | - | - | - | 133 Kb |
| 19. | PDTD123EK | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW | NXP Semiconductors | PHILIPS | - | - | - | 63 Kb |
| 20. | PDTD123EK | Low VCEsat (BISS) transistors | NXP Semiconductors | PHILIPS | - | - | - | 639 Kb |
