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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | CT20ASJ-8 | STROBE FLASHER USE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 27 Kb |
2. | CT20ASJ-8 | MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | Renesas Technology Corp | RENESAS | - | - | - | 48 Kb |
3. | CT25ASJ-8 | STROBE FLASHER USE | Powerex Power Semiconductors | POWEREX | - | - | - | 30 Kb |
4. | CT25ASJ-8 | MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | Renesas Technology Corp | RENESAS | - | - | - | 50 Kb |
5. | CT25ASJ-8 | STROBE FLASHER USE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 30 Kb |
6. | CT20ASJ-8 | STROBE FLASHER USE | Powerex Power Semiconductors | POWEREX | - | - | - | 27 Kb |
7. | GS70328SJ-8 | 32K x 8 256Kb Asynchronous SRAM | GSI Technology | GSI | - | - | - | 237 Kb |
8. | GS71108ASJ-8 | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 390 Kb |
9. | GS71108ASJ-8 | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 300 Kb |
10. | TC514402ASJ-80 | 1,048,576 WORD x 4 BIT DYNAMIC RAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 660 Kb |
11. | GM71C4256ASJ-80 | 262,144 WORD x 4 BIT CMOS DYNAMIC RAM | LG Semicon Co.,Ltd. | LG | - | - | - | 1.01 Mb |
12. | GM71C4256ALSJ-80 | 262,144 WORD x 4 BIT CMOS DYNAMIC RAM | LG Semicon Co.,Ltd. | LG | - | - | - | 1.01 Mb |
13. | SJ-870 | CRYSTAL CLOCK OSCILLATORS | Nel Frequency Controls,inc | NEL | - | - | - | 260 Kb |
14. | GS70328SJ-8I | 32K x 8 256Kb Asynchronous SRAM | GSI Technology | GSI | - | - | - | 237 Kb |
15. | GS71108ASJ-8I | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 300 Kb |
16. | GS71108ASJ-8I | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 390 Kb |
17. | GS70328SJ-8IT | 32K x 8 256Kb Asynchronous SRAM | GSI Technology | GSI | - | - | - | 237 Kb |
18. | GS70328SJ-8T | 32K x 8 256Kb Asynchronous SRAM | GSI Technology | GSI | - | - | - | 237 Kb |