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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | IPP04N03LA | OptiMOS 2 Power-Transistor | Infineon Technologies AG | INFINEON | - | - | - | 354 Kb |
2. | IPP04N03LA | OptiMOS 2 Power-Transistor | Infineon Technologies AG | INFINEON | - | - | - | 354 Kb |
3. | IPP04N03LA | OptiMOS^2 Power-Transistor | Infineon Technologies AG | INFINEON | - | - | - | 306 Kb |
4. | IPP04N03LB | OptiMOS^2 Power-Transistor | Infineon Technologies AG | INFINEON | - | - | - | 343 Kb |
5. | IPP04N03LBG | OptiMOS2 Power-Transistor | Infineon Technologies AG | INFINEON | - | - | - | 278 Kb |
6. | IPP04N03LBG | OptiMOS^2 Power-Transistor | Infineon Technologies AG | INFINEON | - | - | - | 343 Kb |
7. | IPP04N03LBG_08 | OptiMOS2 Power-Transistor | Infineon Technologies AG | INFINEON | - | - | - | 278 Kb |
8. | CJP04N20 | Power Filed Effect Transistor | Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | - | - | - | 211 Kb |
9. | AP04N20GK-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics Corp. | APOWER | - | - | - | 59 Kb |
10. | SPP04N50C3 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated | Infineon Technologies AG | INFINEON | - | - | - | 637 Kb |
11. | SPP04N50C3_09 | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated | Infineon Technologies AG | INFINEON | - | - | - | 637 Kb |
12. | NDP04N50Z | N-Channel Power MOSFET 500 V, 2.7 | ON Semiconductor | ONSEMI | - | - | - | 133 Kb |
13. | NDP04N50ZG | N-Channel Power MOSFET 500 V, 2.7 | ON Semiconductor | ONSEMI | - | - | - | 133 Kb |
14. | CEP04N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Chino-Excel Technology | CET | - | - | - | 831 Kb |
15. | SGP04N60 | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | Infineon Technologies AG | INFINEON | - | - | - | 348 Kb |
16. | SKP04N60 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | INFINEON | - | - | - | 400 Kb |
17. | SPP04N60C2 | Cool MOS Power Transistor | Infineon Technologies AG | INFINEON | - | - | - | 175 Kb |
18. | SPP04N60C3 | Cool MOS Power Transistor | Infineon Technologies AG | INFINEON | - | - | - | 302 Kb |
19. | SPP04N60C3 | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | Infineon Technologies AG | INFINEON | - | - | - | 597 Kb |
20. | AP04N60H-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics Corp. | APOWER | - | - | - | 59 Kb |