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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  K4R441869A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 2. | K4R441869A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 3. | K4R441869A-NMCK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 4. | K4R441869A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 5. | K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 6. | K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 7. | K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 8. | K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 9. | K4R441869AN-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 10. | K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 11. | K4R441869B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 12. | K4R441869B-MCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 13. | K4R441869B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 14. | K4R441869B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 15. | K4R441869B-NCK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 16. | K4R441869B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
