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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  DF15JC10 | Schottky Barrier Diode | Shindengen Electric Mfg.Co.Ltd | SHINDENGEN | - | - | - | 555 Kb |
| 2. | DF20JC10 | Shottky Rectifiers(SBD) | Shindengen Electric Mfg.Co.Ltd | SHINDENGEN | - | - | - | 323 Kb |
| 3. | DF30JC10 | Schottky Barrier Diode | Shindengen Electric Mfg.Co.Ltd | SHINDENGEN | - | - | - | 560 Kb |
| 4. | SF15JC10 | SHCOTTKY RECTIFIERS(SBD) | Shindengen Electric Mfg.Co.Ltd | SHINDENGEN | - | - | - | 231 Kb |
| 5. | SF20JC10 | Schottky Rectifiers (SBD) | Shindengen Electric Mfg.Co.Ltd | SHINDENGEN | - | - | - | 261 Kb |
| 6. | L8C203JC10 | 512/1K/2K/4K x 9-bit Asynchronous FIFO | LOGIC Devices Incorporated | LODEV | - | - | - | 190 Kb |
| 7. | L8C201JC10 | 512/1K/2K/4K x 9-bit Asynchronous FIFO | LOGIC Devices Incorporated | LODEV | - | - | - | 190 Kb |
| 8. | L8C202JC10 | 512/1K/2K/4K x 9-bit Asynchronous FIFO | LOGIC Devices Incorporated | LODEV | - | - | - | 190 Kb |
| 9. | L8C204JC10 | 512/1K/2K/4K x 9-bit Asynchronous FIFO | LOGIC Devices Incorporated | LODEV | - | - | - | 190 Kb |
| 10. | K6R1004C1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Samsung semiconductor | SAMSUNG | - | - | - | 187 Kb |
| 11. | K6R1004C1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | SAMSUNG | - | - | - | 191 Kb |
| 12. | K6R1004V1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | SAMSUNG | - | - | - | 191 Kb |
| 13. | K6R1008C1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | SAMSUNG | - | - | - | 191 Kb |
| 14. | K6R1008V1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Samsung semiconductor | SAMSUNG | - | - | - | 187 Kb |
| 15. | K6R1008V1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | SAMSUNG | - | - | - | 191 Kb |
| 16. | K6R1016C1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Samsung semiconductor | SAMSUNG | - | - | - | 187 Kb |
| 17. | K6R1016C1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | SAMSUNG | - | - | - | 191 Kb |
| 18. | K6R1016V1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | Samsung semiconductor | SAMSUNG | - | - | - | 187 Kb |
| 19. | K6R1016V1D-JC10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. | Samsung semiconductor | SAMSUNG | - | - | - | 191 Kb |
| 20. | K6R4004C1D-JC10 | 1Mx4 Bit High Speed Static RAM(5.0V Operating) | Samsung semiconductor | SAMSUNG | - | - | - | 216 Kb |
