We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
Chipmanuals.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  IRFF310 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | SEMELAB | - | - | - | 12 Kb |
| 2. | IRFF024 | 60V, N-CHANNEL | International Rectifier | IRF | - | - | - | 139 Kb |
| 3. | IRFF024 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | SEMELAB | - | - | - | 12 Kb |
| 4. | IRFF034 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | Seme LAB | SEMELAB | - | - | - | 12 Kb |
| 5. | IRFF110 | 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET | Intersil Corporation | INTERSIL | - | - | - | 333 Kb |
| 6. | IRFF110 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
| 7. | IRFF110 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | SEMELAB | - | - | - | 12 Kb |
| 8. | IRFF111 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
| 9. | IRFF112 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
| 10. | IRFF113 | Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 179 Kb |
| 11. | IRFF120 | 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET | Intersil Corporation | INTERSIL | - | - | - | 330 Kb |
| 12. | IRFF120 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) | International Rectifier | IRF | - | - | - | 138 Kb |
| 13. | IRFF120 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
| 14. | IRFF121 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
| 15. | IRFF122 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
| 16. | IRFF123 | N-Channel Enhancement-Mode Power MOS Field-Effect Transistors | GE Solid State | GESS | - | - | - | 167 Kb |
| 17. | IRFF130 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | GESS | - | - | - | 167 Kb |
| 18. | IRFF130 | N-Channel MOSFET in a Hermetically sealed TO39 | Seme LAB | SEMELAB | - | - | - | 12 Kb |
| 19. | IRFF130 | 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET | Intersil Corporation | INTERSIL | - | - | - | 329 Kb |
| 20. | IRFF131 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | GESS | - | - | - | 167 Kb |
| 21. | IRFF132 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS | GE Solid State | GESS | - | - | - | 167 Kb |
