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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  NH00CG6 | NH Fuse Links | Littelfuse | LITTELFUSE | - | - | - | 427 Kb |
| 2. | DBCMJC33CG6 | PIN HEADERS | Dubilier | DUBILIER | - | - | - | 91 Kb |
| 3. | K4R441869B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 4. | K4R271669B-NCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 5. | K4R441869B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 6. | K4R271669B-MCG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 7. | K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 8. | K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 9. | K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 10. | K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 11. | K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 12. | K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb |
| 13. | K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb |
| 14. | K4R271669A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 15. | MR16R0824BN1-CG6 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
| 16. | MR16R0826BN1-CG6 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
| 17. | MR16R0828BN1-CG6 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
| 18. | K4R441869A-NMCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb |
| 19. | K4R881869M-NBCCG6 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb |
| 20. | MR16R082CGBN1-CG6 | RAMBUS MODULE | Samsung semiconductor | SAMSUNG | - | - | - | 42 Kb |
