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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  GS71108AJ-7 | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 300 Kb |
| 2. | GS71108AJ-7 | 128K x 8 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 390 Kb |
| 3. | GS71116AJ-7 | 1Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 286 Kb |
| 4. | GS72108AJ-7 | 256K x 8 2Mb Asynchronous SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 224 Kb |
| 5. | GS72116AJ-7 | 128K x 16 2Mb Asynchronous SRAM | GSI Technology | GSI | - | - | - | 377 Kb |
| 6. | GS74116AJ-7 | 256K x 16 4Mb Asynchronous SRAM | GSI Technology | GSI | - | - | - | 313 Kb |
| 7. | GS74104AJ-7 | 7ns 1M x 4 4Mb asynchronous SRAM | GSI Technology | GSI | - | - | - | 241 Kb |
| 8. | GS74108AJ-7 | 7ns 512K x 8 4Mb asynchronous SRAM | GSI Technology | GSI | - | - | - | 295 Kb |
| 9. | GS74108AJ-7 | 7ns 512K x 8 4Mb asynchronous SRAM | GSI Technology | GSI | - | - | - | 295 Kb |
| 10. | HM514260AJ-7 | 262, 144-Word x 16-Bit Dynamic Random Access Memory | Hitachi Semiconductor | HITACHI | - | - | - | 1.19 Mb |
| 11. | HM514400AJ-7 | 1,048,576-WORD x 4-BIT DYNAMIC RAM | Hitachi Semiconductor | HITACHI | - | - | - | 1.12 Mb |
| 12. | HM5118165AJ-7 | 1048576-word x 16-bit Dynamic Random Access Memory | Hitachi Semiconductor | HITACHI | - | - | - | 1.60 Mb |
| 13. | HM51S4260AJ-7 | 262, 144-Word x 16-Bit Dynamic Random Access Memory | Hitachi Semiconductor | HITACHI | - | - | - | 1.19 Mb |
| 14. | PEEL22CV10AJ-7 | PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | ANACHIP | - | - | - | 186 Kb |
| 15. | PEEL22CV10AJ-7 | CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | ANACHIP | - | - | - | 345 Kb |
| 16. | PEEL22CV10AJ-7 | CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | ANACHIP | - | - | - | 344 Kb |
| 17. | GM71C18163AJ-7 | 1,048,576 words x 16 bit DRAM, 70ns | LG Semicon Co.,Ltd. | LG | - | - | - | 1.77 Mb |
| 18. | KM416V1004AJ-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung semiconductor | SAMSUNG | - | - | - | 1.74 Mb |
| 19. | HY62256AJ-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | List of Unclassifed Manufacturers | ETC | - | - | - | 813 Kb |
| 20. | TC514402AJ-70 | 1,048,576 WORD x 4 BIT DYNAMIC RAM | Toshiba Semiconductor | TOSHIBA | - | - | - | 660 Kb |
