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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  3FTL6 | through-hole or SMD / 50mA/24VDC / single pole/momentary | List of Unclassifed Manufacturers | ETC | - | - | - | 29 Kb |
| 2. | 3FTL6 | through-hole or SMD | List of Unclassifed Manufacturers | ETC | - | - | - | 292 Kb |
| 3. | 11TL60 | Door Interlock Switches | ITT Industries | ITT | - | - | - | 332 Kb |
| 4. | 12TL60 | Door Interlock Switches | ITT Industries | ITT | - | - | - | 332 Kb |
| 5. | 23TL60 | Door Interlock Switches | ITT Industries | ITT | - | - | - | 332 Kb |
| 6. | K4S561632E-TL60 | 256Mb E-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 203 Kb |
| 7. | K4S641632E-TL60 | 64Mbit SDRAM | Samsung semiconductor | SAMSUNG | - | - | - | 94 Kb |
| 8. | K4S641632F-TL60 | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 98 Kb |
| 9. | K4S641632H-TL60 | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free | Samsung semiconductor | SAMSUNG | - | - | - | 154 Kb |
| 10. | K4S643232E-TL60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 78 Kb |
| 11. | K4S643232F-TL60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 78 Kb |
| 12. | K4S643232H-TL60 | 64Mb H-die (x32) SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 126 Kb |
| 13. | K4S643232H-TL60 | 64Mb H-die (x32) SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 126 Kb |
| 14. | K4S643232C-TL60 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 787 Kb |
| 15. | K4E641612C-TL60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 16. | K4E661612C-TL60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 917 Kb |
| 17. | K4S281632E-TL60 | 128Mb E-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 155 Kb |
| 18. | K4S281632F-TL60 | 128Mb F-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 153 Kb |
| 19. | K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
| 20. | K4E661612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung semiconductor | SAMSUNG | - | - | - | 918 Kb |
