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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 2SC799 | NPN SILICON EPITAXIAL TRANSISTOR | List of Unclassifed Manufacturers | ETC | - | - | - | 47 Kb |
2. | NX8570SC799-BA | 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR | California Eastern Labs | CEL | - | - | - | 303 Kb |
3. | NX8571SC799-BA | 1550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR | California Eastern Labs | CEL | - | - | - | 302 Kb |
4. | VSC7990W | SONET/SDH 10.7Gb/s laser diode driver | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 95 Kb |
5. | VSC7991 | SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 107 Kb |
6. | VSC7991CD | SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 107 Kb |
7. | VSC7991X | SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 107 Kb |
8. | VSC7992 | 10.7 Gb/s RZ or NRZ Laser Modulator Driver | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 450 Kb |
9. | VSC7997 | 10.7 Gb/s Transimpedance Amplifier | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 419 Kb |
10. | VSC7998 | 10.7 Gb/s Transimpedance Amplifier | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 419 Kb |
11. | VSC7999 | 11.3 Gb/s Transimpedance Amplifiers with Photocurrent Monitor and Input Slicing Adjust | Vitesse Semiconductor Corporation | VITESSE | - | - | - | 95 Kb |
12. | NX8570SC799D-BA | 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR | California Eastern Labs | CEL | - | - | - | 303 Kb |
13. | NX8571SC799D-BA | 1550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR | California Eastern Labs | CEL | - | - | - | 302 Kb |