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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | KM62256CLG-5 | 32Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 111 Kb |
2. | KM62256CLG-5 | 32Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 112 Kb |
3. | KM62256DLG-5 | 32Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 125 Kb |
4. | KM684000LG-5 | 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM | Samsung semiconductor | SAMSUNG | - | - | - | 338 Kb |
5. | KM68512ALG-5 | 64Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 109 Kb |
6. | KM681000BLG-5 | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 132 Kb |
7. | KM681000CLG-5 | 128K x8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 139 Kb |
8. | KM681000ELG-5 | 128Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 120 Kb |
9. | KM684000ALG-5 | 128Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 140 Kb |
10. | KM684000BLG-5 | 512Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 126 Kb |
11. | KM684000CLG-5 | 512Kx8 bit Low Power CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 125 Kb |
12. | MT46V2M32LG-5 | 512K x 32 x 4banks, CL=3, 200MHz double data rate (DDR) SDRAM | Micron Technology | MICRON | - | - | - | 2.36 Mb |
13. | MT46V4M32LG-5 | 1Meg x 32 x 4banks, 2.5V, CL=3, 200MHz double data rate (DDR) SDRAM | Micron Technology | MICRON | - | - | - | 1.92 Mb |
14. | MT46V2M32V1LG-5 | 512K x 32 x 4banks, CL=3, 200MHz double data rate (DDR) SDRAM | Micron Technology | MICRON | - | - | - | 2.36 Mb |
15. | MT46V4M32V1LG-5 | 1Meg x 32 x 4banks, 2.5V, CL=3, 200MHz double data rate (DDR) SDRAM | Micron Technology | MICRON | - | - | - | 1.92 Mb |
16. | ELM1117LG-50-S | Bipolar 1A LDO Voltage regulator | ELM Technology Corporation | ELMTECH | - | - | - | 209 Kb |
17. | MT46V2M32LG-55 | 512K x 32 x 4banks, CL=3, 183MHz double data rate (DDR) SDRAM | Micron Technology | MICRON | - | - | - | 2.36 Mb |
18. | MT46V2M32LG-55 | 512K x 32 x 4banks, CL=3, 183MHz double data rate (DDR) SDRAM | Micron Technology | MICRON | - | - | - | 2.36 Mb |
19. | HY628100ALG-55 | 128Kx8bit CMOS SRAM, standby current 100 uA, 55ns | List of Unclassifed Manufacturers | ETC | - | - | - | 109 Kb |
20. | HY628100ALLG-55 | 128Kx8bit CMOS SRAM, standby current 20 uA, 55ns | List of Unclassifed Manufacturers | ETC | - | - | - | 109 Kb |