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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  HZ6LB3 | SILICON EPITAXIAL PLANER ZENER DIODES | SEMTECH ELECTRONICS LTD. | SEMTECHELEC | - | - | - | 200 Kb |
| 2. | HZ7LB3 | SILICON EPITAXIAL PLANER ZENER DIODES | SEMTECH ELECTRONICS LTD. | SEMTECHELEC | - | - | - | 200 Kb |
| 3. | HZ9LB3 | SILICON EPITAXIAL PLANER ZENER DIODES | SEMTECH ELECTRONICS LTD. | SEMTECHELEC | - | - | - | 200 Kb |
| 4. | HZ12LB3 | SILICON EPITAXIAL PLANER ZENER DIODES | SEMTECH ELECTRONICS LTD. | SEMTECHELEC | - | - | - | 200 Kb |
| 5. | HZS6LB3 | Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology Corp | RENESAS | - | - | - | 75 Kb |
| 6. | HZ11LB3 | SILICON EPITAXIAL PLANER ZENER DIODES | SEMTECH ELECTRONICS LTD. | SEMTECHELEC | - | - | - | 200 Kb |
| 7. | HZS7LB3 | Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology Corp | RENESAS | - | - | - | 75 Kb |
| 8. | HZS9LB3 | Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology Corp | RENESAS | - | - | - | 75 Kb |
| 9. | HZS11LB3 | Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology Corp | RENESAS | - | - | - | 75 Kb |
| 10. | HZS12LB3 | Silicon Epitaxial Planar Zener Diode for Low Noise Application | Renesas Technology Corp | RENESAS | - | - | - | 75 Kb |
| 11. | ST62T25LB3 | 8-bit MCU with 8-bit A/D converter, two timers, oscillator safeguard & safe reset, 64 b RAM, 4Kb OTP, 8MHz, low voltage | STMicroelectronics | STMICROELECTRONICS | - | - | - | 1.05 Mb |
| 12. | K4H1G0438M-LB3 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | Samsung semiconductor | SAMSUNG | - | - | - | 224 Kb |
| 13. | K4H1G0838M-LB3 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | Samsung semiconductor | SAMSUNG | - | - | - | 224 Kb |
| 14. | K4H510438C-LB3 | 512Mb C-die DDR SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 377 Kb |
| 15. | K4H511638D-LB3 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | Samsung semiconductor | SAMSUNG | - | - | - | 375 Kb |
| 16. | K4H510838D-LB3 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | Samsung semiconductor | SAMSUNG | - | - | - | 375 Kb |
| 17. | K4H1G0438M-ULB3 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | Samsung semiconductor | SAMSUNG | - | - | - | 224 Kb |
| 18. | K4H280838F-ULB3 | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | Samsung semiconductor | SAMSUNG | - | - | - | 315 Kb |
| 19. | K4H510838C-ZLB3 | 512Mb C-die DDR SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 400 Kb |
| 20. | K4H510838C-ULB3 | 512Mb C-die DDR SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 377 Kb |
