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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  FD400K4E | RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc | List of Unclassifed Manufacturers | ETC | - | - | - | 355 Kb |
| 2. | K4E151611 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 3. | K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 4. | K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 5. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 6. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 7. | K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 8. | K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 9. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 10. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 11. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 12. | K4E160411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 13. | K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 14. | K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 15. | K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 16. | K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 17. | K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 18. | K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 19. | K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 20. | K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
