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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  SK307 | 3 AMP SCHOTTKY BARRIER RECTIFIERS | DIOTEC Electronics Corporation | DEC | - | - | - | 44 Kb |
| 2. | SK307 | 3 AMP SCHOTTKY BARRIER RECTIFIERS | DIOTEC Electronics Corporation | DEC | - | - | - | 411 Kb |
| 3. | 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 59 Kb |
| 4. | 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | RENESAS | - | - | - | 94 Kb |
| 5. | SK3070C | 30 AMP SCHOTTKY BARRIER RECTIFIERS | DIOTEC Electronics Corporation | DEC | - | - | - | 430 Kb |
| 6. | 2SK3070L | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 59 Kb |
| 7. | 2SK3070L-E | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | RENESAS | - | - | - | 94 Kb |
| 8. | 2SK3070S | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 59 Kb |
| 9. | 2SK3070STL-E | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology Corp | RENESAS | - | - | - | 94 Kb |
| 10. | 2SK3072 | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device | SANYO | - | - | - | 32 Kb |
| 11. | 2SK3074 | N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) | Toshiba Semiconductor | TOSHIBA | - | - | - | 110 Kb |
| 12. | 2SK3074 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 158 Kb |
| 13. | 2SK3074_07 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 158 Kb |
| 14. | 2SK3075 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 166 Kb |
| 15. | 2SK3075 | N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) | Toshiba Semiconductor | TOSHIBA | - | - | - | 113 Kb |
| 16. | 2SK3075_07 | SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER | Toshiba Semiconductor | TOSHIBA | - | - | - | 166 Kb |
| 17. | 2SK3076 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 55 Kb |
| 18. | 2SK3076L | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 55 Kb |
| 19. | 2SK3076S | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor | HITACHI | - | - | - | 55 Kb |
| 20. | 2SK3077 | SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) | Toshiba Semiconductor | TOSHIBA | - | - | - | 151 Kb |
