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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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Searchign results: IRFS645
| IRFS645 datasheet
Why ChipManuals.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 0 - 9# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | IRFS640 | Improved inductive ruggedness | Samsung semiconductor | SAMSUNG | - | - | - | 301 Kb | 2. | IRFS640 | 200V N-Channel MOSFET | Fairchild Semiconductor | FAIRCHILD | - | - | - | 922 Kb | 3. | IRFS640A | Rugged Gate Oxide Technology | Fairchild Semiconductor | FAIRCHILD | - | - | - | 314 Kb | 4. | IRFS640A | Improved gate charge | Samsung semiconductor | SAMSUNG | - | - | - | 297 Kb | 5. | IRFS640B | 200V N-Channel MOSFET | Fairchild Semiconductor | FAIRCHILD | - | - | - | 922 Kb | 6. | IRFS640B | 200V N-Channel MOSFET | Tiger Electronic Co.,Ltd | TGS | - | - | - | 19 Kb | 7. | IRFS641 | Improved inductive ruggedness | Samsung semiconductor | SAMSUNG | - | - | - | 301 Kb | 8. | IRFS644A | Advanced Power MOSFET | Fairchild Semiconductor | FAIRCHILD | - | - | - | 239 Kb | 9. | IRFS644B | 250V N-Channel MOSFET | Fairchild Semiconductor | FAIRCHILD | - | - | - | 906 Kb |
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