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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  DECL-6 | 10K ECL Logic Buffered Delay 16-Pin Modules | Rhombus Industries Inc. | RHOMBUSIND | - | - | - | 32 Kb |
| 2. | FECL-6 | 10K ECL Logic Buffered Delay 16-Pin Modules | Rhombus Industries Inc. | RHOMBUSIND | - | - | - | 32 Kb |
| 3. | MECL-6 | 10K ECL Logic Buffered Delay 16-Pin Modules | Rhombus Industries Inc. | RHOMBUSIND | - | - | - | 32 Kb |
| 4. | FT2500CL-6 | Phase Control SCR 2500 Amperes Avg 200-1200 Volts | Powerex Power Semiconductors | POWEREX | - | - | - | 162 Kb |
| 5. | KM44C256CL-6 | 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 1.08 Mb |
| 6. | GM71C17403CL-6 | 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM | Hynix Semiconductor | HYNIX | - | - | - | 82 Kb |
| 7. | GM71C18163CL-6 | 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM | Hynix Semiconductor | HYNIX | - | - | - | 95 Kb |
| 8. | GM71S17403CL-6 | 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM | Hynix Semiconductor | HYNIX | - | - | - | 82 Kb |
| 9. | GM71V17403CL-6 | 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM | Hynix Semiconductor | HYNIX | - | - | - | 84 Kb |
| 10. | GM71V18163CL-6 | 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM | Hynix Semiconductor | HYNIX | - | - | - | 96 Kb |
| 11. | GM71CS17403CL-6 | 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM | Hynix Semiconductor | HYNIX | - | - | - | 82 Kb |
| 12. | HYB25D256800CL-6 | 256 Mbit Double Data Rate SDRAM | Infineon Technologies AG | INFINEON | - | - | - | 2.80 Mb |
| 13. | K4E640812B-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
| 14. | K4E660812B-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
| 15. | K4E660812B-JCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
| 16. | K4E640812B-JCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
| 17. | K4E640812C-JCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
| 18. | K4E660812C-JCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
| 19. | K4E660812C-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
| 20. | K4E640812C-TCL-6 | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns | Samsung semiconductor | SAMSUNG | - | - | - | 436 Kb |
