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CK86A datasheet
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 0 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. |  70RCK8 | RACKS 8 Channel | Grayhill, Inc | GRAYHILL | - | - | - | 653 Kb | | 2. | LNG898CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | PANASONIC | - | - | - | 27 Kb | | 3. | LNG897CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | PANASONIC | - | - | - | 27 Kb | | 4. | LNW876CK8 | 3.2 mm InGaAIP | Panasonic Semiconductor | PANASONIC | - | - | - | 26 Kb | | 5. | LNW898CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | PANASONIC | - | - | - | 27 Kb | | 6. | LNW897CK8 | 3.0 mm InGaAIP | Panasonic Semiconductor | PANASONIC | - | - | - | 26 Kb | | 7. | K4R271669B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb | | 8. | K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.57 Mb | | 9. | K4R271669B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb | | 10. | K4R441869B-NCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb | | 11. | K4R441869B-MCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb | | 12. | K4R271669AN-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb | | 13. | K4R271669AM-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb | | 14. | K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb | | 15. | K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb | | 16. | K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb | | 17. | K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung semiconductor | SAMSUNG | - | - | - | 325 Kb | | 18. | K4R271669A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb | | 19. | K4R441869A-NMCK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung semiconductor | SAMSUNG | - | - | - | 2.55 Mb | | 20. | MR16R1624AF0-CK8 | (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V | Samsung semiconductor | SAMSUNG | - | - | - | 431 Kb |
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