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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | AI-227 | SMA Straight Connectors, Crimp Type for Braided Cable, Captive Contact | ITT Industries | ITT | - | - | - | 87 Kb |
2. | 28C64AI-20 | 64K - BIT CMOS E2PROM | Catalyst Semiconductor | CATALYST | - | - | - | 247 Kb |
3. | W241024AI-20 | 128L X 8 HIGH SPEED CMOS STATIC RAM | Winbond | WINBOND | - | - | - | 116 Kb |
4. | KM28C64AI-20 | 8K x 8 bit CMOS electrically erasable PROM, 200ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
5. | KM28C65AI-20 | 8K x 8 bit CMOS electrically erasable PROM, 200ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
6. | KM28C64AI-20 | 8K x 8 bit CMOS electrically erasable PROM, 200ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
7. | KM28C65AI-20 | 8K x 8 bit CMOS electrically erasable PROM, 200ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
8. | CAT28C64AI-20 | 64K - BIT CMOS E2PROM | Catalyst Semiconductor | CATALYST | - | - | - | 247 Kb |
9. | KM681002AI-20 | 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. | Samsung semiconductor | SAMSUNG | - | - | - | 120 Kb |
10. | KM6161002AI-20 | 64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out | Samsung semiconductor | SAMSUNG | - | - | - | 445 Kb |
11. | UC62LS4096AI-20 | Low Power CMOS SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 139 Kb |
12. | UC62LV4096AI-20 | Low Power CMOS SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 141 Kb |
13. | UC62LS2048AI-20 | Low Power CMOS SRAM | List of Unclassifed Manufacturers | ETC | - | - | - | 138 Kb |
14. | AI-227 | SMA Straight Connectors, Crimp Type for Braided Cable, Captive Contact | ITT Industries | ITT | - | - | - | 87 Kb |
15. | 28C64AI-25 | 64K - BIT CMOS E2PROM | Catalyst Semiconductor | CATALYST | - | - | - | 247 Kb |
16. | KM28C65AI-25 | 8K x 8 bit CMOS electrically erasable PROM, 250ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
17. | KM28C64AI-25 | 8K x 8 bit CMOS electrically erasable PROM, 250ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
18. | KM28C64AI-25 | 8K x 8 bit CMOS electrically erasable PROM, 250ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
19. | KM28C65AI-25 | 8K x 8 bit CMOS electrically erasable PROM, 250ns | Samsung semiconductor | SAMSUNG | - | - | - | 376 Kb |
20. | CAT28C64AI-25 | 64K - BIT CMOS E2PROM | Catalyst Semiconductor | CATALYST | - | - | - | 247 Kb |
21. | PEEL22CV10AI-25 | CMOS Programmable Electrically Erasable Logic Device | List of Unclassifed Manufacturers | ETC | - | - | - | 184 Kb |