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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  L6611D | DIGITALLY PROGRAMMABLE SECONDARY HOUSEKEEPING CONTROLLER | STMicroelectronics | STMICROELECTRONICS | - | - | - | 617 Kb |
| 2. | UN611D | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor | PANASONIC | - | - | - | 177 Kb |
| 3. | UNR611D | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic Semiconductor | PANASONIC | - | - | - | 177 Kb |
| 4. | NJM2611D | SERVO MOTOR CONTROLLER | New Japan Radio | NJRC | - | - | - | 280 Kb |
| 5. | K4E171611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 6. | K4E661611D | 4M x 16bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 916 Kb |
| 7. | K4F171611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 8. | SHD122611D | HIGH CURRENT HERMETIC SCHOTTKY | Sensitron | SENSITRON | - | - | - | 80 Kb |
| 9. | SHD123611D | HIGH CURRENT HERMETIC SCHOTTKY | Sensitron | SENSITRON | - | - | - | 79 Kb |
| 10. | SHD124611D | HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage | Sensitron | SENSITRON | - | - | - | 55 Kb |
| 11. | SHD125611D | HERMETIC POWER SCHOTTKY RECTIFIER 150`C Maximum Operation Temperature | Sensitron | SENSITRON | - | - | - | 54 Kb |
| 12. | K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 13. | K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 14. | TC2611D-750M | TOROID INDUCTORS | Productwell Precision Elect.CO.,LTD | PRODUCTWELL | - | - | - | 128 Kb |
| 15. | K4E171611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 16. | K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 17. | K4F171611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 18. | K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 19. | K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 20. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
