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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | EPA060BV | High Efficiency Heterojunction Power FET | Excelics Semiconductor, Inc. | EXCELICS | - | - | - | 45 Kb |
2. | EFA060BV | Low Distortion GaAs Power FET | Excelics Semiconductor, Inc. | EXCELICS | - | - | - | 29 Kb |
3. | MMBZ5260BV | SURFACE MOUNT SILICON ZENER DIODES | Pan Jit International Inc. | PANJIT | - | - | - | 99 Kb |
4. | MMBZ5260BV | SURFACE MOUNT SILICON ZENER DIODES | Pan Jit International Inc. | PANJIT | - | - | - | 81 Kb |
5. | MIC59P60BV | 8-Bit Serial-Input Protected Latched Driver | Micrel Semiconductor | MICREL | - | - | - | 102 Kb |
6. | MIC59P60BV | 8-Bit Serial-Input Protected Latched Driver | Micrel Semiconductor | MICREL | - | - | - | 106 Kb |
7. | HD6432160BV | Hitachi 16-Bit Single-Chip Microcomputer | Renesas Technology Corp | RENESAS | - | - | - | 4.76 Mb |
8. | HD64F2160BV | Hitachi 16-Bit Single-Chip Microcomputer | Renesas Technology Corp | RENESAS | - | - | - | 4.76 Mb |
9. | HD64F2160BV | Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2100 Series | Renesas Technology Corp | RENESAS | - | - | - | 5.19 Mb |
10. | BLF8G22LS-160BV | RF Manual 16th edition | NXP Semiconductors | NXP | - | - | - | 7.80 Mb |
11. | CY7C1460BV25 | 36-Mbit (1 M ‡ 36/2 M ‡ 18) Pipelined SRAM with NoBL Architecture | Cypress Semiconductor | CYPRESS | - | - | - | 505 Kb |
12. | X05160BV5 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, OCXO | MTRONPTI | MTRONPTI | - | - | - | 197 Kb |
13. | X05160BV5-R | 14 pin DIP, 5.0 Volt, HCMOS/TTL, OCXO | MTRONPTI | MTRONPTI | - | - | - | 197 Kb |
14. | XO5160BV6 | 14 pin DIP, 5.0 Volt, HCMOS/TTL, OCXO | MTRONPTI | MTRONPTI | - | - | - | 260 Kb |
15. | XO5160BV6-R | 14 pin DIP, 5.0 Volt, HCMOS/TTL, OCXO | MTRONPTI | MTRONPTI | - | - | - | 260 Kb |
16. | CYK256K16MCCBU-60BVI | 4-Mbit (256K x 16) Pseudo Static RAM | Cypress Semiconductor | CYPRESS | - | - | - | 300 Kb |
17. | CYK256K16SCCBU-60BVI | 4-Mbit (256K x 16) Pseudo Static RAM | Cypress Semiconductor | CYPRESS | - | - | - | 302 Kb |
18. | M5M29GB160BVP | 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 227 Kb |
19. | M5M29GB160BVP | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 199 Kb |
20. | M5M29WT160BVP | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 199 Kb |