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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | NTE56043 | TRIAC, 16 Amp, sensitive gate. Repetitive peak off-state voltage Vdrm = 600V. On-state RMS current 16A. | NTE Electronics | NTE | - | - | - | 22 Kb |
2. | 008560430 | KK.045 SQ PIN LOOSE | Molex Electronics Ltd. | MOLEX | - | - | - | 149 Kb |
3. | K4S560432A | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 92 Kb |
4. | K4S560432A-TC/L1H | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 92 Kb |
5. | K4S560432A-TC/L1L | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 92 Kb |
6. | K4S560432A-TC/L75 | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 92 Kb |
7. | K4S560432A-TC/L80 | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 92 Kb |
8. | K4S560432B | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 96 Kb |
9. | K4S560432B-TC/L1H | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 96 Kb |
10. | K4S560432B-TC/L1L | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 96 Kb |
11. | K4S560432B-TC/L75 | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 96 Kb |
12. | K4S560432D | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
13. | K4S560432D-TC1H | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
14. | K4S560432D-TC1L | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
15. | K4S560432D-TC75 | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
16. | K4S560432D-TC7C | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
17. | K4S560432D-TL1H | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
18. | K4S560432D-TL1L | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
19. | K4S560432D-TL75 | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |
20. | K4S560432D-TL7C | 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 82 Kb |