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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 2SC3668 | NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 199 Kb |
2. | 2SC3661 | High-hFE, Low-Frequency General-Purpose Amp Applications | Sanyo Semicon Device | SANYO | - | - | - | 80 Kb |
3. | 2SC3661 | NPN Epitaxial Planar Silicon Transistor | Guangdong Kexin Industrial Co.,Ltd | KEXIN | - | - | - | 33 Kb |
4. | 2SC3663 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION | NEC | NEC | - | - | - | 100 Kb |
5. | 2SC3663 | NPN Epitaxial Silicon Transistor | Guangdong Kexin Industrial Co.,Ltd | KEXIN | - | - | - | 34 Kb |
6. | 2SC3664 | High-Voltage Switching Applications | Sanyo Semicon Device | SANYO | - | - | - | 97 Kb |
7. | 2SC3665 | NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 149 Kb |
8. | 2SC3665 | Audio Power Amplifier Applications Driver-Stage Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 107 Kb |
9. | 2SC3665_04 | Audio Power Amplifier Applications Driver-Stage Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 107 Kb |
10. | 2SC3666 | NPN EPITAXIAL TYPE (AUDIO POWER APLIFIER APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 146 Kb |
11. | 2SC3666 | Audio Power Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 110 Kb |
12. | 2SC3666_04 | Audio Power Amplifier Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 110 Kb |
13. | 2SC3668 | NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 199 Kb |
14. | 2SC3668 | Power Amplifier Applications Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 143 Kb |
15. | 2SC3668_04 | Power Amplifier Applications Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 143 Kb |
16. | 2SC3669 | NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 172 Kb |
17. | 2SC3669 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS | Unisonic Technologies | UTC | - | - | - | 117 Kb |
18. | 2SC3669 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 137 Kb |
19. | 2SC3669 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS | Unisonic Technologies | UTC | - | - | - | 117 Kb |
20. | 2SC3669_04 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 137 Kb |
21. | 2SC3669_2 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS | Unisonic Technologies | UTC | - | - | - | 117 Kb |