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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  HB15161 | Breake Away Header .025(0.64mm) Square Posts | List of Unclassifed Manufacturers | ETC | - | - | - | 154 Kb |
| 2. | HC15161 | Breake Away Header .025(0.64mm) Square Posts | List of Unclassifed Manufacturers | ETC | - | - | - | 154 Kb |
| 3. | 0022415161 | 2.54mm (.100") KK^ IDT Double Cantilever Contact, 16 Circuits, Tin (Sn), Feed-Through, 26 Stranded or Solid, and 28 Solid, Stranded, or Fused, Brown ID Strip | Molex Electronics Ltd. | MOLEX | - | - | - | 494 Kb |
| 4. | 06151610 | tyco electronics contents | Tyco Electronics | TYCO | - | - | - | 5.39 Mb |
| 5. | 0923151610 | Picoflex PF-50 IDT-to-IDT, 16 Circuits, 0.10m (3.94") Length | Molex Electronics Ltd. | MOLEX | - | - | - | 88 Kb |
| 6. | 06151611 | tyco electronics contents | Tyco Electronics | TYCO | - | - | - | 5.39 Mb |
| 7. | K4E151611 | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 8. | K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 9. | MAL215161101E3 | Aluminum Capacitors Radial Long-Life, High Voltage | Vishay Siliconix | VISHAY | - | - | - | 100 Kb |
| 10. | MAL215161109E3 | Aluminum Capacitors Radial Long-Life, High Voltage | Vishay Siliconix | VISHAY | - | - | - | 100 Kb |
| 11. | 0471516112 | 0.50mm (.020") Pitch HDMI Receptacle, Right Angle, 0.76um (30u") Gold (Au) Plating, Front Solder Tab Length | Molex Electronics Ltd. | MOLEX | - | - | - | 717 Kb |
| 12. | K4E151611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 13. | K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 14. | K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 15. | K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 16. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 17. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 18. | K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 19. | K4F151611D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 531 Kb |
| 20. | EPI151611G4036L | Contents Surface Mount Power Inductor | PCA ELECTRONICS INC. | PCA | - | - | - | 1.80 Mb |
