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Found: 71      Displaying: 21 - 30
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
21.
Datasheet IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
222K
22.
Datasheet IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
138K
23.
Datasheet IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
162K
24.
Datasheet IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
-
3
-55°C
150°C
199K
25.
Datasheet IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A
IRF
DDPak
3
-55°C
150°C
222K
26.
Datasheet IRG4BC20MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
IRF
-
3
-55°C
150°C
251K
27.
Datasheet IRG4BC20MD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A
IRF
DDPak
3
-55°C
150°C
200K
28.
Datasheet IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
157K
29.
Datasheet IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
30.
Datasheet IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
31.
Datasheet IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
DDPak
3
-55°C
150°C
382K
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