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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  F1016 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | POLYFET | - | - | - | 33 Kb |
| 2. | F1016 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | POLYFET | - | - | - | 33 Kb |
| 3. | F1016 | ATO Blade Fuse Rated 32V | Littelfuse | LITTELFUSE | - | - | - | 173 Kb |
| 4. | FPF1016 | IntelliMAX 1V Rated Advanced Load Management Products | Fairchild Semiconductor | FAIRCHILD | - | - | - | 475 Kb |
| 5. | SSF1016 | Power switching application | Silikron Semiconductor Co.,LTD. | SILIKRON | - | - | - | 333 Kb |
| 6. | SN74F1016 | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas Instruments | TI | - | - | - | 77 Kb |
| 7. | F1016-ND | ATO Blade Fuse Rated 32V | Littelfuse | LITTELFUSE | - | - | - | 173 Kb |
| 8. | PTF10160 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | Ericsson | ERICSSON | - | - | - | 258 Kb |
| 9. | PTF10161 | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor | Ericsson | ERICSSON | - | - | - | 290 Kb |
| 10. | PTF10162 | 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | Ericsson | ERICSSON | - | - | - | 349 Kb |
| 11. | SN74F1016DW | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas Instruments | TI | - | - | - | 77 Kb |
| 12. | SN74F1016DWR | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas Instruments | TI | - | - | - | 77 Kb |
| 13. | SN74F1016DWR | 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY | Texas Instruments | TI | - | - | - | 77 Kb |
| 14. | K6F1016U4B | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 121 Kb |
| 15. | K6F1016U4B-F | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 121 Kb |
| 16. | K6F1016U4B-FF55 | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 121 Kb |
| 17. | K6F1016U4B-FF70 | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 121 Kb |
| 18. | DS_K6F1016U4C | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 132 Kb |
| 19. | K6F1016U4C-AF55 | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 132 Kb |
| 20. | K6F1016U4C-AF70 | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 132 Kb |
| 21. | K6F1016U4C-EF55 | 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor | SAMSUNG | - | - | - | 132 Kb |
