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K4F660811B-JC-45 Datasheet

 Datasheet for Samsung Electronic
Description:8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
Manufacturer:Samsung Electronic
Temp. range:Min: 0°C | Max: 70°C
Package:SOJ
Pins:32
Link: K4F660811B-JC-45.PDF (367Kb)


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K4F660811B-JC-45.PDF

K4F660811B-JC-45 datasheet: 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns K4F660811B-JC-45

Datasheet


RELEVANT RESULTS FOR K4F660811B-JC-45 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet K4F660412D16M x 4bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
387 Kb
2.
Datasheet K4F660412D-JC/L16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
387 Kb
3.
Datasheet K4F660412D-TC/L16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
387 Kb
4.
Datasheet K4F660811B8M x 8bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
5.
Datasheet K4F660811B8M x 8bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
6.
Datasheet K4F660811B-JC-458M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
7.
Datasheet K4F660811B-JC-508M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
8.
Datasheet K4F660811B-JC-608M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
9.
Datasheet K4F660811B-TC-458M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
10.
Datasheet K4F660811B-TC-508M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
11.
Datasheet K4F660811B-TC-608M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
Samsung semiconductor
SAMSUNG
-
-
-
386 Kb
12.
Datasheet K4F660812D8M x 8bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
387 Kb
13.
Datasheet K4F660812D-JC/L8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
387 Kb
14.
Datasheet K4F660812D-TC/L8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.
Samsung semiconductor
SAMSUNG
-
-
-
387 Kb
15.
Datasheet K4F661612B4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
876 Kb
16.
Datasheet K4F661612B-L4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
876 Kb
17.
Datasheet K4F661612B-TC4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
SAMSUNG
-
-
-
876 Kb
18.
Datasheet K4F661612B-TC454M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns
Samsung semiconductor
SAMSUNG
-
-
-
876 Kb
19.
Datasheet K4F661612B-TC504M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns
Samsung semiconductor
SAMSUNG
-
-
-
876 Kb
20.
Datasheet K4F661612B-TC604M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
Samsung semiconductor
SAMSUNG
-
-
-
876 Kb

 
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