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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | BCM800 | CryptoNetX-TM SSL800 ACCELERATOR ADAPTER | Broadcom Corporation. | BOARDCOM | - | - | - | 535 Kb |
2. | TCM8000 | CELLULAR TELEPHONE AUDIO PROCESSOR | Texas Instruments | TI | - | - | - | 224 Kb |
3. | TPCM8001-H | High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications | Toshiba Semiconductor | TOSHIBA | - | - | - | 43 Kb |
4. | TPCM8001-H | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) | Toshiba Semiconductor | TOSHIBA | - | - | - | 307 Kb |
5. | TPCM8001-H_07 | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) | Toshiba Semiconductor | TOSHIBA | - | - | - | 307 Kb |
6. | BCM8002 | FOUR-CHANNEL 3.125 GIGABIT ETHERNET CMOS TRANSCEIVER | Broadcom Corporation. | BOARDCOM | - | - | - | 125 Kb |
7. | TCM8002 | DATA PROCESSOR FOR CELLULAR TELEPHONE | Texas Instruments | TI | - | - | - | 333 Kb |
8. | TCM8002FR | DATA PROCESSOR FOR CELLULAR TELEPHONE | Texas Instruments | TI | - | - | - | 333 Kb |
9. | TPCM8006 | Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) | Toshiba Semiconductor | TOSHIBA | - | - | - | 200 Kb |
10. | CM800DU-12H | Dual IGBTMOD 800 Amperes/600 Volts | Powerex Power Semiconductors | POWEREX | - | - | - | 67 Kb |
11. | CM800DY-24S | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 428 Kb |
12. | CM800DY-24S | Powerex Dual IGBTMOD Modules are designed for use in switching applications. | Powerex Power Semiconductors | POWEREX | - | - | - | 408 Kb |
13. | CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 71 Kb |
14. | CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE | Powerex Power Semiconductors | POWEREX | - | - | - | 65 Kb |
15. | CM800DZB-34N | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 94 Kb |
16. | CM800E2C-66H | 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 54 Kb |
17. | CM800E2Z-66H | HIGH POWER SWITCHING USE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 54 Kb |
18. | CM800E6C-66H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 80 Kb |
19. | CM800HA-24H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 57 Kb |
20. | CM800HA-24H | Single IGBTMOD 800 Amperes/1200 Volts | Powerex Power Semiconductors | POWEREX | - | - | - | 65 Kb |