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STH4N90 Datasheet

 Datasheet for SGS-Thomson Microelectronics
Description:Power dissipation 125 W Transistor polarity N Channel Current Id cont. 4.2 A Current Idm pulse 16 A Pitch lead 5.45 mm Voltage Vds max 900 V Resistance Rds on 3.2 R Temperature current 25 ?C
Manufacturer:SGS-Thomson Microelectronics
Temp. range:Min: - | Max: -
Package:TO-218
Pins:Not available...
Link: STH4N90.PDF (621Kb)


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STH4N90.PDF

STH4N90 datasheet: Power dissipation 125 W Transistor polarity N Channel Current Id cont. 4.2 A Current Idm pulse 16 A Pitch lead 5.45 mm Voltage Vds max 900 V Resistance Rds on 3.2 R Temperature current 25 ?C STH4N90

Datasheet


RELEVANT RESULTS FOR STH4N90 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet STH4N90N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
630 Kb
2.
Datasheet STH4N90FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
630 Kb

 
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