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STH8N80 Datasheet

 Datasheet for SGS-Thomson Microelectronics
Description:Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C
Manufacturer:SGS-Thomson Microelectronics
Temp. range:Min: - | Max: -
Package:TO-218
Pins:Not available...
Link: STH8N80.PDF (345Kb)


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STH8N80.PDF

STH8N80 datasheet: Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C STH8N80

Datasheet


RELEVANT RESULTS FOR STH8N80 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet STH8N80N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
STMICROELECTRONICS
-
-
-
351 Kb
2.
Datasheet STH8N80FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
STMICROELECTRONICS
-
-
-
351 Kb
3.
Datasheet STH8NA60N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
138 Kb
4.
Datasheet STH8NA60FIN - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
STMICROELECTRONICS
-
-
-
138 Kb
5.
Datasheet STH8NA80N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
STMICROELECTRONICS
-
-
-
54 Kb
6.
Datasheet STH8NA80FIN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
STMICROELECTRONICS
-
-
-
54 Kb
7.
Datasheet STH8NB90N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh MOSFET
STMicroelectronics
STMICROELECTRONICS
-
-
-
312 Kb
8.
Datasheet STH8NB90FIN-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh MOSFET
STMicroelectronics
STMICROELECTRONICS
-
-
-
312 Kb

 
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