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RELEVANT RESULTS FOR AT-106PIN DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | GAT-10 | Miniature Plastic Fixed Attenuators | Mini-Circuits | MINI | - | - | - | 208 Kb | 2. | HN58V65AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) | Hitachi Semiconductor | HITACHI | - | - | - | 146 Kb | 3. | HN58V66AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) | Hitachi Semiconductor | HITACHI | - | - | - | 146 Kb | 4. | LC35256AT-10 | 256 K (32768 words X 8 bits) SRAM with OE and CE control Pins | Sanyo Semicon Device | SANYO | - | - | - | 188 Kb | 5. | GS72116AT-10 | 128K x 16 2Mb Asynchronous SRAM | GSI Technology | GSI | - | - | - | 377 Kb | 6. | W24L010AT-10 | 128K X 8 High Speed CMOS Static RAM | Winbond | WINBOND | - | - | - | 105 Kb | 7. | W24L011AT-10 | 128K X 8 High Speed CMOS Static RAM | Winbond | WINBOND | - | - | - | 158 Kb | 8. | W26L010AT-10 | 64K X 16 High Speed CMOS Static RAM | Winbond | WINBOND | - | - | - | 94 Kb | 9. | HN58V65AT-10 | 64 k EEPROM (8-kword ‡ 8-bit) Ready/Busy Function, RES Function (HN58V66A) | Renesas Technology Corp | RENESAS | - | - | - | 269 Kb | 10. | HN58V66AT-10 | 64 k EEPROM (8-kword ‡ 8-bit) Ready/Busy Function, RES Function (HN58V66A) | Renesas Technology Corp | RENESAS | - | - | - | 269 Kb | 11. | CLM2810AT-10 | 10 V, 1.0 A low dropout regulator | Calogic, LLC | CALOGIC | - | - | - | 30 Kb | 12. | HN58C256AT-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) | Hitachi Semiconductor | HITACHI | - | - | - | 146 Kb | 13. | HN58C257AT-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) | Hitachi Semiconductor | HITACHI | - | - | - | 146 Kb | 14. | GS840F18AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | GSI | - | - | - | 423 Kb | 15. | GS840F32AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | GSI | - | - | - | 423 Kb | 16. | GS840F36AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | GSI | - | - | - | 423 Kb | 17. | GS840FH32AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | GSI | - | - | - | 422 Kb | 18. | GS840FH36AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | GSI | - | - | - | 422 Kb | 19. | GS840FH18AT-10 | 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs | GSI Technology | GSI | - | - | - | 422 Kb | 20. | PEEL22CV10AT-10 | PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device | Anachip Corp | ANACHIP | - | - | - | 186 Kb |
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