We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
Chipmanuals.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  F1012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | POLYFET | - | - | - | 31 Kb |
| 2. | F1012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices | POLYFET | - | - | - | 31 Kb |
| 3. | BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens Semiconductor Group | SIEMENS | - | - | - | 35 Kb |
| 4. | SF1012 | SF1012 | MTRONPTI | MTRONPTI | - | - | - | 244 Kb |
| 5. | PTF10120 | 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor | Ericsson | ERICSSON | - | - | - | 426 Kb |
| 6. | MRF10120 | MICROWAVE POWER TRANSISTOR NPN SILICON | Tyco Electronics | TYCO | - | - | - | 130 Kb |
| 7. | MRF10120 | Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz | M/A-COM Technology Solutions, Inc. | MACOM | - | - | - | 168 Kb |
| 8. | MRF10120 | MICROWAVE POWER TRANSISTOR | Motorola, Inc | MOTOROLA | - | - | - | 103 Kb |
| 9. | CMF10120D | Silicon Carbide Power MOSFET | Cree, Inc | CREE | - | - | - | 690 Kb |
| 10. | PTF10122 | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | Ericsson | ERICSSON | - | - | - | 269 Kb |
| 11. | PTF10125 | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor | Ericsson | ERICSSON | - | - | - | 298 Kb |
| 12. | DSPIC30F1012AT-20I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | MICROCHIP | - | - | - | 1.61 Mb |
| 13. | DSPIC30F1012AT-30I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | MICROCHIP | - | - | - | 1.61 Mb |
| 14. | DSPIC30F1012BT-20I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | MICROCHIP | - | - | - | 1.61 Mb |
| 15. | DSPIC30F1012CT-20I/P | High-Performance, 16-bit Digital Signal Controllers | Microchip Technology | MICROCHIP | - | - | - | 1.61 Mb |
| 16. | BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group | SIEMENS | - | - | - | 46 Kb |
| 17. | MF1012S-1 | FOR GPS SYSTEM | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 143 Kb |
| 18. | BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) | Siemens Semiconductor Group | SIEMENS | - | - | - | 360 Kb |
