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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | APT6010B2FLL | POWER MOS 7 FREDFET | Advanced Power Technology | ADPOW | - | - | - | 165 Kb |
2. | APT6010B2FLL | POWER MOS 7 FREDFET | Microsemi Corporation | MICROSEMI | - | - | - | 256 Kb |
3. | APT6010B2LL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Advanced Power Technology | ADPOW | - | - | - | 73 Kb |
4. | APT6010B2LL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Microsemi Corporation | MICROSEMI | - | - | - | 254 Kb |
5. | APT6010JFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Advanced Power Technology | ADPOW | - | - | - | 74 Kb |
6. | APT6010JFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Microsemi Corporation | MICROSEMI | - | - | - | 263 Kb |
7. | APT6010JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Microsemi Corporation | MICROSEMI | - | - | - | 262 Kb |
8. | APT6010JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Advanced Power Technology | ADPOW | - | - | - | 72 Kb |
9. | APT6010LFLL | POWER MOS 7 FREDFET | Advanced Power Technology | ADPOW | - | - | - | 165 Kb |
10. | APT6010LFLL | POWER MOS 7 FREDFET | Microsemi Corporation | MICROSEMI | - | - | - | 256 Kb |
11. | APT6010LFLLG | POWER MOS 7 FREDFET | Microsemi Corporation | MICROSEMI | - | - | - | 256 Kb |
12. | APT6010LLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Advanced Power Technology | ADPOW | - | - | - | 73 Kb |
13. | APT6010LLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Microsemi Corporation | MICROSEMI | - | - | - | 254 Kb |
14. | APT6010LLLG | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Microsemi Corporation | MICROSEMI | - | - | - | 254 Kb |
15. | APT6011B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 35 Kb |
16. | APT6011B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 149 Kb |
17. | APT6011B2VFR_04 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 149 Kb |
18. | APT6011B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 39 Kb |
19. | APT6011B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 147 Kb |
20. | APT6011B2VR_04 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 147 Kb |