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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  APT1001 | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | Advanced Power Technology | ADPOW | - | - | - | 36 Kb |
| 2. | APT1001 | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | Advanced Power Technology | ADPOW | - | - | - | 36 Kb |
| 3. | APT1001R1AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs | Advanced Power Technology | ADPOW | - | - | - | 73 Kb |
| 4. | APT1001R1BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | Advanced Power Technology | ADPOW | - | - | - | 57 Kb |
| 5. | APT1001R1BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 75 Kb |
| 6. | APT1001R1HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 72 Kb |
| 7. | APT1001R3BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | Advanced Power Technology | ADPOW | - | - | - | 57 Kb |
| 8. | APT1001R6BFLL | POWER MOS 7 R FREDFET | Advanced Power Technology | ADPOW | - | - | - | 153 Kb |
| 9. | APT1001R6BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | Advanced Power Technology | ADPOW | - | - | - | 55 Kb |
| 10. | APT1001R6SFLL | POWER MOS 7 R FREDFET | Advanced Power Technology | ADPOW | - | - | - | 153 Kb |
| 11. | APT1001RBLC | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | Advanced Power Technology | ADPOW | - | - | - | 36 Kb |
| 12. | APT1001RBN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | Advanced Power Technology | ADPOW | - | - | - | 56 Kb |
| 13. | APT1001RBVFR | POWER MOS V FREDFET | Advanced Power Technology | ADPOW | - | - | - | 122 Kb |
| 14. | APT1001RBVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 73 Kb |
| 15. | APT1001RSLC | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | Advanced Power Technology | ADPOW | - | - | - | 36 Kb |
| 16. | APT1001RSVFR | POWER MOS V FREDFET | Advanced Power Technology | ADPOW | - | - | - | 122 Kb |
| 17. | APT1001RSVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Advanced Power Technology | ADPOW | - | - | - | 76 Kb |
| 18. | APT10021JFLL | Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Advanced Power Technology | ADPOW | - | - | - | 74 Kb |
| 19. | APT10021JFLL | Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Advanced Power Technology | ADPOW | - | - | - | 156 Kb |
| 20. | APT10021JFLL_04 | Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | Advanced Power Technology | ADPOW | - | - | - | 156 Kb |
