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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | NM27C512QM200 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | National Semiconductor | NSC | - | - | - | 166 Kb |
2. | NM27P040QM200 | 4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM | National Semiconductor | NSC | - | - | - | 150 Kb |
3. | NM27P512QM200 | 524,288-Bit (64K x 8) Processor Oriented CMOS EPROM | National Semiconductor | NSC | - | - | - | 187 Kb |
4. | NMC27C128BQM200 | High Speed Version 131,072-Bit(16k x 8) UV Erasable CMOS PROM | National Semiconductor | NSC | - | - | - | 372 Kb |
5. | TQM200A | Topstek Current Transducer | Topstek Inc. | TOPSTEK | - | - | - | 91 Kb |
6. | QM200DY-24 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 79 Kb |
7. | QM200DY-24B | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 96 Kb |
8. | QM200DY-2H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 88 Kb |
9. | QM200DY-2HB | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 96 Kb |
10. | QM200DY-HB | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 79 Kb |
11. | QM200DY-HBK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 92 Kb |
12. | QM200DY-HK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 90 Kb |
13. | QM200DY-HK | 100A - transistor module for medium power switching use, insulated type | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 90 Kb |
14. | QM200HA-24 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 78 Kb |
15. | QM200HA-2H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 77 Kb |
16. | QM200HA-HK | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 82 Kb |
17. | QM200HC-M | HIGH POWER SWITCHING USE NON-INSULATED TYPE | Mitsubishi Electric Semiconductor | MITSUBISHI | - | - | - | 83 Kb |
18. | SQM200N04-1M1L | Automotive N-Channel 40 V (D-S) 175 `C MOSFET | Vishay Siliconix | VISHAY | - | - | - | 115 Kb |
19. | SQM200N04-1M7L | Automotive N-Channel 40 V (D-S) 175 `C MOSFET | Vishay Siliconix | VISHAY | - | - | - | 113 Kb |
20. | SQM200N04-1M8 | Automotive N-Channel 40 V (D-S) 175 `C MOSFET | Vishay Siliconix | VISHAY | - | - | - | 114 Kb |