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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  K4E170411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 2. | K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 3. | K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 4. | K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 5. | K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 6. | K4E170412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 7. | K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 8. | K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 9. | K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 10. | K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 11. | K4E170811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 12. | K4E170811D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 13. | K4E170811D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 14. | K4E170812D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 15. | K4E170812D-B | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 16. | K4E170812D-F | 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 262 Kb |
| 17. | K4E171611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 18. | K4E171611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 19. | K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
| 20. | K4E171611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung semiconductor | SAMSUNG | - | - | - | 556 Kb |
